Die neue nasschemische Anlage IPSG CEI 4800 entfernt die hochdotierte Schicht von der Rückseite und den Kanten des Silizium-Wafers chemisch und isoliert damit den Emitter von der Rückseite ( CEI = chemical edge isolation ).
In einem zweiten Arbeitsschritt wird die auf der Oberseite verbliebene Phosphorsilikatglasschicht entfernt (IPSG = inline removal of phosphor silicate glass).
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www.manz.comThe new wet-chemical tool named IPSG CEI 4800 removes the highly doped layer from the backside and the edges of a wafer and thereby produces a chemical edge isolation ( CEI ).
In a second process step the remaining phosphor silicate glass (PSG) layer on the front side of the wafer that was created during the previous diffusion process step, is removed.
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